Micron Technology, Inc., and Intel Corporation are sampling the industry’s first NAND flash memory built on 50 nanometre (nm) process technology. The samples were manufactured through IM Flash Technologies, a joint development and manufacturing venture from Micron and Intel.
Both companies are sampling 4 gigabit (Gb) devices now, with plans to mass produce a range of densities on the 50nm node in 2007.
This move to 50nm process technology will enable Intel and Micron to meet the growing demand for higher density NAND flash across a range of computing and consumer electronics applications such as digital music players, removable storage and handheld communications devices.
Micron and Intel formed IM Flash Technologies (IMFT) in January 2006 to manufacture NAND flash memory products for the two companies. Micron is currently supplying the venture NAND flash from its Boise fabrication facilities, and Micron’s 300mm facility in Manassas, Virginia, will be online later this year to supply IMFT with NAND.