Samsung Electronics Co., Ltd. has developed a high density NAND flash, capable of storing 16Gigabit (Gb) or the equivalent of 2GB (gigabytes) per NAND memory device. NAND is the most widely used memory for multi-feature mobile applications.
"Memory is opening a bold new world in consumer electronics," said Dr. Chang-Gyu Hwang, Samsung Electronics' semiconductor business president and CEO, at a press conference in Seoul today. "With cards containing multiple 16Gb flash memory chips, you will be able to take your entire music and personal video libraries with you on one small portable device."
The 16Gb NAND density was achieved with the use of 50-nanometer (nm) technology directly applicable to mass production processes and by using Samsung's 3D-transistor architecture.
The new 16Gb memory creates the conditions for companies to develop and accelerate the use of NAND flash in mobile and portable digital applications, as an alternative to mini-HDDs (hard disk drives) and even HDDs for laptops.
The development of the 16Gb NAND flash comes at an opportune time as consumer electronic (CE) manufacturers are now considering the introduction of NAND-based storage to bolster performance and power consumption levels in new CE gadgets.
The availability of this product will allow mobile and portable application designers to use memory cards with densities up to 32 gigabytes by combining up to 16 such devices on a single card.
The size of this new fingernail-sized flash memory has been reduced 25% from that of the 8Gb NAND memory developed last year using 60-nanometer technology. The new flash memory boasts the industry's smallest cell size, only 0.00625 square microns per bit. The 16Gb device holds 16.4 billion functional transistors, each measuring one two-thousandths the thickness of a piece of human hair.
Samsung plans to begin mass producing its 16Gb NAND flash in the second half of 2006.
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