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Samsung Electronics Develops 4Gb (gigabit) OneNAND Flash for multimedia phones
Posted on 20-Apr-2005 20:06 | Tags Filed under: News



Samsung Electronics Co., Ltd., has developed a 4Gb (gigabit) OneNAND Flash memory device for multimedia phones, featuring micro-compact dimensions, low power consumption and high performance, in addition to its high density.

The company expects OneNAND to be especially popular as the memory device powering small 3G mobile phones, advanced PDAs, a new generation of portable gaming systems and the highest performing digital cameras. The new OneNAND memory device operates on 1.8V, reducing power consumption to nearly half of the existing 3.3V level for other types of mobile memory. It also features a micro-compact size (11x13x1.4mm), considerably smaller than mobile memory of the same capacity.

The 4Gb OneNAND boasts a sustained data read speed of 108 MByte/s, four times faster than conventional NAND Flash memory, and a write speed of 10 MByte/s, more than 60 times faster than NOR flash memory. It can store 250 sequential photographs from a 5-megapixel camera phone, or up to 120 music files.

Samsung Electronics has a wide product range of OneNAND Flash memory sizes, from 128Mb to 4Gb with software that will optimize it for virtually all popular mobile operating systems, including Symbian and Linux.

The 4Gb OneNAND memory is a quad die package (QDP) developed by stacking four 1Gbit OneNAND memory chips in a 90 nanometer production process developed last November.

According to market researcher iSuppli, the 3G mobile handset market will reach 240 million handsets in annual sales by 2008, recording a massive annual growth rate of 87% from 2004.

The company said it will begin mass producing its new 4Gb OneNAND Flash in July.






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